Buried strap for trench storage capacitors in dram trench cells

Details Buried strap for trench storage capacitors in dram trench cells Buried strap for trench storage capacitors in dram trench cells

1997-06-06

1999-09-14

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438246, 438248, 438389, 438392, H01L 218242

Patent

active

059536071

ABSTRACT:
A dynamic random access memory (DRAM) cell is formed with a buried strap which is routed through an isolation trench. This structure frees space in the transfer gate such that the location of the buried strap is not a limiting factor for decreasing the size of DRAM cells.

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patent: 5658816 (1997-08-01), Rajeevakumar
patent: 5692281 (1997-12-01), Rajeevakumar

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