Buried shallow trench isolation and method for forming the same

Details Buried shallow trench isolation and method for forming the same Buried shallow trench isolation and method for forming the same

1999-06-03

2000-07-04

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438424, 438444, 438222, 257510, H01L 21336

Patent

active

060837977

ABSTRACT:
An integrated semiconductor device includes a substrate having a buried shallow trench isolation structure and an epitaxial layer disposed over the substrate and the buried shallow trench isolation structure. The epitaxial layer includes a shallow trench isolation structure that extends over the buried shallow trench isolation structure in the substrate to substantially reduce leakage current in the substrate to prevent device latch-up.

REFERENCES:
patent: 4902639 (1990-02-01), Ford
patent: 5675176 (1997-10-01), Ushiku et al.
patent: 5677564 (1997-10-01), McCormack et al.
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5721173 (1998-02-01), Yano et al.
patent: 5767549 (1998-06-01), Chen et al.
patent: 5937311 (1999-08-01), Nagatomo

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