Buried ridge II-VI laser diode

Details Buried ridge II-VI laser diode Buried ridge II-VI laser diode

1993-02-12

1995-04-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 99, 257 00, 257744, 372 44, 372 45, 372 50, H01S 319, H01L 2940

Patent

active

054040272

ABSTRACT:
A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.

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