Buried plate structure for vertical dram devices

Details Buried plate structure for vertical dram devices Buried plate structure for vertical dram devices

2007-03-28

2009-11-10

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257S534000, C257SE27092

Reexamination Certificate

active

07615816

ABSTRACT:
A buried plate region for a semiconductor memory storage capacitor is self aligned with respect to an upper portion of a deep trench containing the memory storage capacitor.

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