Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Patent
1997-12-05
2000-04-04
Fourson, George
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
438455, 438459, 257508, H01L 2912
Patent
active
060456256
ABSTRACT:
A silicon-on-insulator structure (10) having a thick buried multi-layer (14) is disclosed herein. The thick buried multi-layer (14) comprises a thermal expansion coefficient matching layer (14b) between two insulator layers (14a,14c). The thermal expansion co-efficient matching layer (14b) comprises a material that more closely matches the thermal expansion co-efficient of the silicon substrate (12). Examples include polysilicon and nitridized oxide.
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Brady III Wade James
Donaldson Richard L.
Fourson George
Garner Jacqueline J.
Texas Instruments Incorporated
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