Buried layer contact for an integrated circuit structure

Details Buried layer contact for an integrated circuit structure Buried layer contact for an integrated circuit structure

1995-06-29

1997-03-25

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257397, 257586, 257588, H01L 2976, H01L 2994, H01L 27082, H01L 27102

Patent

active

056147503

ABSTRACT:
A buried layer contact for a integrated circuit structure is provided, with particular application for a contact for a buried collector of a bipolar transistor. The buried layer contact takes the form of a sinker comprising a fully recessed trench isolated structure having dielectric lined sidewalls and filled with conductive material, e.g. doped polysilicon which contacts the buried layer. The trench isolated contact is more compact than a conventional diffused sinker structure, and thus beneficially allows for reduced transistor area. Advantageously, a reduced area sinker reduces the parasitic capacitance and power dissipation. In a practical implementation, the structure provides for an annular collector contact structure to reduce collector resistance.

REFERENCES:
patent: 5001538 (1991-03-01), Pollock et al.
patent: 5286996 (1994-02-01), Neudeck et al.

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