Buried layer and method

Details Buried layer and method Buried layer and method

2001-03-02

2009-08-18

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S210000, C438S218000, C438S224000, C438S532000, C438S527000

Reexamination Certificate

active

07575969

ABSTRACT:
A high resistivity silicon for RF passive operation including CMOS structures with implanted CMOS wells and a buried layer under the wells formed by deep implants during well implantations.

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