Buried-gate semiconductor device with improved level of integrat

Details Buried-gate semiconductor device with improved level of integrat Buried-gate semiconductor device with improved level of integrat

1999-05-05

2000-11-28

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257372, H07L 2978

Patent

active

061539082

ABSTRACT:
In a semiconductor device in which a source and a drain are formed on both sides of a buried gate provided in a trench, metal wires for the source and the drain are provided above the source and drain, via an intervening interlayer insulation film, a wire for a gate being provided so as to be sandwiched between the source and drain wires, this being formed on the same level of interconnect layers as the source and drain wires and being formed over the gate.

REFERENCES:
patent: 4243997 (1981-01-01), Natori et al.
patent: 5808340 (1998-09-01), Wollesen et al.

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