Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Patent
1997-09-10
1999-11-16
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
257773, 257903, H01L 2940
Patent
active
059863285
ABSTRACT:
An method for the fabrication of an improved polysilicon buried contact is described. The contact is formed within a trench etched into the silicon substrate. The effective area of the contact is thereby increased over the conventional planar buried contact by an amount equal to the area of the trench walls. For sub-micron sized buried contacts and trenches 1000 to 3000 Angstroms deep this area can be twice that of the conventional planar buried contact. Contacts formed in this fashion are particularly beneficial in the manufacture of static-random-access memory, devices (SRAMs) through their application with local-interconnects. They afford a lower contact resistance, manifested by the greater effective contact area, as well as a much reduced risk of open or high resistive contacts due to photomask mis-alignment. The presence of the trench also results in a higher junction capacitance which affords a reduction in soft-error-rates, a notable concern for memory devices.
REFERENCES:
patent: 4648175 (1987-03-01), Matz, Jr. et al.
patent: 4860084 (1989-08-01), Shibata
patent: 5315150 (1994-05-01), Furuhata
patent: 5543350 (1996-08-01), Chi et al.
patent: 5604159 (1997-02-01), Cooper et al.
patent: 5607881 (1997-03-01), Huang
patent: 5679607 (1997-10-01), Liu
S. Wolf et al, "Silicon Processing for the VLSI Era" vol. 1, Lattiee Press, Sunset Beach, CA. 1986, p. 577-580.
Ackerman Stephen B.
Crane Sara
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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