Buried bit line DRAM cells

Details Buried bit line DRAM cells Buried bit line DRAM cells

1997-12-09

1999-05-04

Tsai, Jey

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257908, H01L 218242

Patent

active

059006595

ABSTRACT:
A buried bit line DRAM cell includes an active region having a protruding tap, formed in a semiconductor substrate. A device isolation region is formed in the substrate, outside the active region. A bit line laterally contacts the tap and is buried in the device isolation region. Accordingly, photolithography steps for forming a device isolation film twice and for forming a bit line contact can be omitted, thereby obtaining process simplicity and wider process margins.

REFERENCES:
patent: 5438009 (1995-08-01), Yang et al.
patent: 5460994 (1995-10-01), Kim

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