Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-21
2005-06-21
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000
Reexamination Certificate
active
06908842
ABSTRACT:
A bumping process, which is a method of forming a plurality of bumps over a wafer, is provided. The wafer has an active surface having a passivation layer and a plurality of bonding pads thereon. The passivation layer exposes the bonding pads on the active surface. An adhesion layer is formed over the active surface of the wafer covering both the bonding pads and the passivation layer. A metallic layer is formed over the adhesion layer. The adhesion layer and the metallic layer are patterned so that the adhesion layer and the metallic layer remain on top of the bonding pads. A photoresist layer is formed on the active surface of the wafer. The photoresist layer has a plurality of openings that exposes the metallic layer. Next, solder balls are disposed into each opening and melted partially to bond to the metallic layer temporarily by performing a heating process simultaneously. Then, a process of disposing the flux material in the openings to cover the surfaces of the solder balls is performed. Finally, a reflow process is carried out so that the solder balls bonds with the metallic layer securely and the photoresist layer is removed.
REFERENCES:
patent: 6638847 (2003-10-01), Cheung et al.
patent: 2003/0164552 (2003-09-01), Tong et al.
patent: 2003/0189249 (2003-10-01), Tong et al.
Chen Jau-Shoung
Tao Su
Advanced Semiconductor Engineering Inc.
Bacon & Thomas PLLC
Nguyen DiLinh
Pham Hoai
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