Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
1999-12-24
2002-04-30
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S673000, C257S780000, C257S782000
Reexamination Certificate
active
06380555
ABSTRACT:
FIELD OF THE INVENTION
This invention relates generally to semiconductor manufacture and testing. More particularly, this invention relates to a bumped semiconductor component having test pads, and to a method and system for testing bumped semiconductor components.
BACKGROUND OF THE INVENTION
Semiconductor components, such as bare semiconductor dice, semiconductor packages, chip scale packages, BGA devices, and semiconductor wafers can include terminal contacts in the form of bumps. This type of component is sometimes referred to as a “bumped” component (e.g., bumped die, bumped package, bumped wafer).
FIGS. 1 and 1A
 illustrate a bumped semiconductor component which comprises a “flip chip” semiconductor package 
10
. The package 
10
 includes a semiconductor die 
12
, and an array of bumped contacts 
14
 bonded to a face 
16
 (circuit side) of the die 
12
. The bumped contacts 
14
 allow the package 
10
 to be surface mounted to a mating substrate, such as a printed circuit board (PCB) Typically, the bumped contacts 
14
 are made of solder, such that the package 
10
 can be bonded to the mating substrate using a solder reflow process. In addition, the bumped contacts 
14
 can be arranged in a dense array, such as a ball grid array (BGA), or a fine ball grid array (FBGA), to provide a high input/output capability for the package 
10
. Further, the bumped contacts 
14
 can have a spherical, hemispherical, conical, dome or other shape.
The die 
12
 contained in the package 
10
 includes a pattern of die contacts 
20
 (e.g., bond pads) in electrical communication with the bumped contacts 
14
. In addition, the die 
12
 includes internal conductors 
22
 in electrical communication with the die contacts 
20
, and with various semiconductor devices and integrated circuits formed on the die 
12
. The die 
12
 also includes a passivation layer 
24
 formed on the face 
16
 of the die 
12
, and openings 
26
 through the passivation layer 
24
 to the die contacts 
20
. Typically, the passivation layer 
24
 comprises a glass, such as borophosphosilicate glass (BPSG), an oxide, such as SiO
2
, or a polymer, such as polyimide.
The die 
12
 also includes a redistribution circuit 
32
 formed on a surface 
34
 of the passivation layer 
24
, which interconnects the bumped contacts 
14
 to the die contacts 
20
. The redistribution circuit 
32
 includes a pattern of conductors 
36
 in electrical communication with the die contacts 
20
, and an outer passivation layer 
38
 which covers the conductors 
36
. The conductors 
36
 can have a “fan out” configuration to provide a required pitch and pattern for the bumped contacts 
14
.
Redistribution circuits are typically used in semiconductor manufacture to “fan out” the signals from standard wire bond pads, to pads of a dense area array, such as a ball grid array (BGA). In an ideal situation, the die 
12
 would be designed to have the die contacts 
20
 in a pattern that does not require the redistribution circuit 
32
 to be added. For example, a semiconductor manufacturer can design the die 
12
 and the die contacts 
20
 such that the die contacts 
20
 are already in a grid array, for attaching solder balls of a ball grid array (BGA). However, as this ideal situation does not always exist, redistribution circuits are widely used in semiconductor manufacture.
The outer passivation layer 
38
 of the redistribution circuit 
32
 insulates the conductors 
36
, and helps to locate the bumped contacts 
14
. In addition, the outer passivation layer 
38
 functions as a solder mask to prevent solder from flowing between the bumped contacts 
14
 during attachment of the bumped contacts 
14
, and during surface mounting of the package 
10
. The outer passivation layer 
38
 can comprise a dielectric material. Suitable materials for the outer passivation layer 
36
 include polymers such as polyimide, glasses, such as BPSG, or oxides, such as SiO
2
. The outer passivation layer 
38
 includes openings 
40
, and the bumped contacts 
14
 are located within the openings 
40
, and bonded to the conductors 
36
. As shown in 
FIG. 1B
, the redistribution circuit 
32
 can also include an under bump metallization layer (UBM) 
44
, for each bumped contact 
14
 to facilitate bonding to the conductors 
36
.
For performing test procedures on the package 
10
 it is necessary to make temporary electrical connections with the bumped contacts 
14
. Different types of interconnects have been developed for making these temporary electrical connections.
One type of interconnect, typically used for testing components at the wafer level, is known as a “probe card”. Probe cards are typically utilized to test dice contained on a semiconductor wafer prior to dicing of the wafer into individual dice. Probe cards can also be used to test other semiconductor components, such as the packages 
10
 contained on a wafer, on a panel, or on leadframe.
A needle probe card includes contacts in the form of needle probes 
42
 (
FIG. 1A
) which are configured to electrically engage the bumped contacts 
14
. Another type of probe card, manufactured by Wentworth Labs of Brookfield, Conn., is known as a “COBRA” probe card, and includes contacts in the form of buckle beams. Another type of probe card, manufactured by Form Factor, of Elmsford N.Y. includes contacts in the form of wires shaped as spring segments. Still another type of probe card, as described in U.S. Pat. No. 5,894,161 to Akram et al., includes silicon contacts covered with a conductive layer.
In addition to probe cards, another type of interconnect is used to test singulated components. For example, for testing singulated components such as dice or packages, the interconnect can be contained within a carrier adapted to temporarily package one or more components. U.S. Pat. Nos. 5,896,036; 5,844,418; and 5,878,485 to Wood et al.; U.S. Pat. No. 5,783,461 to Hembree; and U.S. Pat. No. 5,815,000 to Farnworth et al. describe carriers for singulated components.
With these carrier-type interconnects, the contacts can comprise projections configured to penetrate the bumped contacts 
14
, or alternately indentations configured to retain the bumped contacts 
14
. U.S. Pat. No. 5,894,161 to Akram et al. and U.S. Pat. No. 5,962,291 to Farnworth et al. describe this type of interconnect.
Regardless of the type of interconnect, problems can arise in making the temporary electrical connections with the bumped contacts 
14
. For example, bumped contacts 
14
 formed of a relatively soft material, such as solder, tend to produce flakes during testing. These flakes can contaminate the equipment used to conduct the test procedures. In addition, solder, and contaminants attracted to the solder, can build up on the interconnect contacts. This build up can increase electrical resistivity through the contacts, and adversely affect the test procedures. Needle probes 
42
 (FIG. 
1
A), for example, can only be used for several hundred touch downs on bumped contacts 
14
 formed of solder before they require cleaning.
Another problem during testing of bumped components, particularly with bumped contacts 
14
 formed of solder, is that the bumped contacts 
14
 deform easily during handling and testing, especially at elevated temperatures. For performing test procedures, it may be difficult to make low resistance electrical connections with deformed bumped contacts 
14
. Also for subsequent bonding procedures, the deformed bumped contacts 
14
 can make alignment and bonding of the component to a mating substrate more difficult. In addition, deformed bumped contacts 
14
 are a cosmetic problem that can adversely affect a users perception of a semiconductor component. Still further, the bumped contacts 
14
 can be separated from the component 
10
 during electrical engagement by the interconnect contacts.
In view of the foregoing problems associated with testing bumped semiconductor components, improved bumped semiconductor components capable of being more easily tested, are needed in the art. Also needed are improved test procedures and test systems for testing bumped semico
de Varona Jorge L.
Hembree David R.
Forde Remmon R.
Gratton Stephen A.
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