Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-03-06
2007-03-06
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S614000, C438S615000
Reexamination Certificate
active
10938594
ABSTRACT:
Solder bump structures for semiconductor device packaging is provided. In one embodiment, a solder bump structure comprises a semiconductor substrate, the substrate has at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad. At least one patterned and etched polymer layer is formed on a portion of the contact pad. At least one patterned and etched conductive metal layer is formed above the polymer layer and is aligned therewith. And at least one layer of solder material having a solder height is provided above the conductive metal layer, the layer of solder is aligned with the conductive metal layer, the layer of solder is thereafter reflown thereby creating a solder ball.
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patent: 6586323 (2003-07-01), Fan et al.
patent: 6854633 (2005-02-01), Grigg et al.
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patent: 2003/0222352 (2003-12-01), Kung et al.
patent: 2004/0099959 (2004-05-01), Tang
Cheng Chia-Jen
Lin Tzu-Han
Lo Chun-Yen
Lu Simon
Su Boe
Birch & Stewart Kolasch & Birch, LLP
Kebede Brook
Kim Su C.
Taiwan Semiconductor Manufacturing Co. Ltd.
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