Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-28
2006-02-28
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S800000, C438S974000, C438S612000, C438S795000, C438S110000, C438S051000, C438S492000
Reexamination Certificate
active
07005368
ABSTRACT:
The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding is connected on the wafer, electric charge accumulated on the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control so that charge can be removed in a noncontact state. Therefore, an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself.
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Ikeya Masahiko
Kanayama Shinji
Mae Takaharu
Narita Shoriki
Tsuboi Yasutaka
Anya Igwe U.
Smith Matthew
Wenderoth , Lind & Ponack, L.L.P.
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