Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-30
2006-05-30
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S614000, C438S617000, C438S652000
Reexamination Certificate
active
07052984
ABSTRACT:
A bump formation method and a bump forming apparatus for a semiconductor wafer are provided in which productivity when bumps are formed onto the semiconductor wafer is improved as compared with the conventional art. There are provided a bump forming head, a recognition device, and a control device. ICs formed on the semiconductor wafer are divided into basic blocks. Bump formation is performed continuously for the ICs included in one basic block. Positional recognition for the other basic blocks is performed only when the bump formation operation is shifted from one basic block to another basic block. Thus, in comparison with the conventional art whereby a positional recognition operation is performed every time bumps are formed on each IC, the number of times of performing positional recognition is greatly reduced, so that productivity can be improved.
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Database WPI, Section EI, Week 200102, Derwent Publications Ltd., London, GB; Class U11, An 2000-335300 XP002215053 & KR 2000 012 116 A (Toshiba KK), Feb. 25, 2000.
Ikeya Masahiko
Kanayama Shinji
Mae Takaharu
Narita Shoriki
Tsuboi Yasutaka
Guerrero Maria F.
Matsushita Electric - Industrial Co., Ltd.
Wenderoth , Lind & Ponack, L.L.P.
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