Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-04
2011-01-04
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S300000, C257SE21442
Reexamination Certificate
active
07863122
ABSTRACT:
A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.
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Office Communication (Mail Date Mar. 30, 2010) for U.S. Appl. No. 11/923,121, filed Oct. 24, 2007; Art Unit 2813; Confirmation No. 9043.
Booth, Jr. Roger Allen
Hovis William Paul
Mandelman Jack Allan
Coleman W. David
International Business Machines - Corporation
Kim Sun M
Schmeiser Olsen & Watts
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