Bulk and strained silicon on insulator using local selective oxi

Details Bulk and strained silicon on insulator using local selective oxi Bulk and strained silicon on insulator using local selective oxi

1997-10-16

1999-10-05

Dutton, Brian

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438439, H01L 2176

Patent

active

059638176

ABSTRACT:
A method for forming buried oxide regions below a single crystal semiconductor layer incorporating the steps of forming epitaxial layers having different rates of oxidation with the lower layer having a faster rate of oxidation and oxidizing the layers through an opening in a mask. A plurality of oxide isolated FET's may be formed. The invention reduces the problem of source/drain parasitic capacitance and short channel effects while isolating FET's and eliminating floating body effects of an FET by selectively oxidizing semiconductor layers.

REFERENCES:
patent: 5670412 (1997-09-01), Juengling
patent: 5783498 (1998-07-01), Dotta
Solid State Phenomena, vols. 47-48 (1996), pp. 17-32, Scitec Publications, Switzerland 1996.

Affiliated with

Also associated with

Rating

Bulk and strained silicon on insulator using local selective oxi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bulk and strained silicon on insulator using local selective oxi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bulk and strained silicon on insulator using local selective oxi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1182590