Bulb-shaped recess gate of a semiconductor device and method...

Details Bulb-shaped recess gate of a semiconductor device and method... Bulb-shaped recess gate of a semiconductor device and method...

2008-03-18

2008-03-18

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C438S259000, C438S270000

Reexamination Certificate

active

11645735

ABSTRACT:
A recess gate of a semiconductor device includes: a substrate having a bulb-shaped recess pattern formed therein, wherein the bulb-shaped recess pattern includes a first ball pattern and a second ball pattern formed therein, the first ball pattern having a different diameter than the second ball pattern; a gate insulation layer formed over the bulb-shaped recess pattern and the substrate; and a conductive layer formed over the gate insulation layer and filling the bulb-shaped recess pattern.

REFERENCES:
patent: 2006/0289931 (2006-12-01), Kim et al.
patent: 2007/0052013 (2007-03-01), Kim et al.
patent: 2007/0105388 (2007-05-01), Lee et al.
patent: 2007/0200169 (2007-08-01), Kim
patent: 2007/0224763 (2007-09-01), Fujimoto et al.
patent: 10-2000-0060693 (2000-10-01), None
patent: 10-2002-0055938 (2002-07-01), None
patent: 10-2006-0023308 (2006-03-01), None
patent: 10-2006-0058959 (2006-06-01), None

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