Bright and dark field scatterometry systems for line...

Optics: measuring and testing – Surface roughness

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C356S601000

Reexamination Certificate

active

08045179

ABSTRACT:
Line edge roughness or line width roughness of a feature on a sample may be determined from incident radiation scattered from the feature. An amount of ordered scattered radiation characterized by a discrete diffraction order is determined and a diffuse scattered radiation signal is measured. A ratio between an intensity of the ordered scattered incident radiation and an intensity of the diffuse scattered radiation signal is determined. The line edge roughness or line width roughness is determined from the ratio.

REFERENCES:
patent: 5608527 (1997-03-01), Valliant et al.
patent: 5880845 (1999-03-01), Leroux
patent: 6801309 (2004-10-01), Nelson
patent: 6804001 (2004-10-01), Leroux
patent: 7184152 (2007-02-01), Brill
patent: 7286243 (2007-10-01), Rosencwaig
patent: 2007/0064247 (2007-03-01), Petit
patent: 1640706 (2006-03-01), None
patent: 1657580 (2006-05-01), None
P. Boher et al. “Innovative Rapid Photo-goniometry method for CD metrology” Metrology, Inspection, and Process Control for Microlithography XVIII, Proceedings of SPIE vol. 5375 (SPIE, Bellingham, WA, 2004), pp. 1302-1313.
P. Boher et al. “Optical Fourier Transform Scatterometry for LER and LWR metrology” Metrology, Inspection, and Process Control for Microlithgraphy XIX, Proc. of SPIE vol. 5752 (SPIE, Bellingham, WA, 2005), pp. 192-203.
Frank Scholze et al. “The influence of line edge roughness and CD uniformity on EUV scatterometry for CD characterization of EUV masks” Modeling Aspects in Optical Metrology, Proc. of SPIE vol. 6617, 66171A, (2007).
Thomas A. Germer “Effect of line and trench profile variation on specular and diffuse reflectance from a periodic structure” Optical Technology Division, National Institute of Standards and Technology, J. Opt. Soc. Am. A vol. 24, No. 3, Mar. 2007, pp. 696-701.
J. Foucher “CD-AFM vs CD-SEM for resist LER and LWR measurements” Metrology, Inspection, and Process Control for Microlithography XX, Proc. of SPIE vol. 6152, 61520V, (2006).
Chengqing Wang et al. “Line edge roughness characterization of sub-50nm structures using CD-SAXS: Round-robin benchmark results” Metrology, Inspection, and Process Control for Microlithography XXI, Proc. of SPIE vol. 6518, 651810, (2007).
Qinghuang Lin et al. “Does Line Edge Roughness Matter?: FEOL and BEOL Perspectives” Advances in Resist Technology and Processing XX, Proceedings of SPIE vol. 5039 (2003), pp. 1076-1085.
J. Thiault et al. “Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes” J. Vac. Sci. Technol. B 23(6) Nov./Dec. 2005, pp. 3075-3079.
Barak Yaakobovitz et al “Line edge roughness detection using deep UV light scatterometry” Department of Chemical Engineering, Technion —Israel Institute of Technology, Microelectronic Engineering 84 (2007) pp. 619-625.
Chengqing Wang et al. “Characterization of correlated line edge roughness of nanoscale line gratings using small angle x-ray scattering” Journal of Applied Physics 102, 024901 (2007).
Chengqing Wang et al. “Small angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing waves” Applied Physics Letters 90, 193122 (2007).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Bright and dark field scatterometry systems for line... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bright and dark field scatterometry systems for line..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bright and dark field scatterometry systems for line... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4292630

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.