Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-14
2011-06-14
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S342000, C257S343000, C257S345000, C257S391000, C257S401000, C257S404000, C257SE29053, C257SE29256
Reexamination Certificate
active
07960786
ABSTRACT:
A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW, wherein at least one of the pre-HVW, the HVW, and the field ring comprises at least two tunnels; an insulation region over the field ring and a portion of the HVW; a drain region in the HVW and adjacent the insulation region; a gate electrode over a portion the insulation region; and a source region on an opposite side of the gate electrode than the drain region.
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Chen Fu-Hsin
Huang Chyi-Chyuan
Huang Eric
Huang Tsung-Yi
Wu Chung-Yeh
Parker Kenneth A
Slater & Matsil L.L.P.
Spalla David
Taiwan Semiconductor Manufacturing Company , Ltd.
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