Bottom source LDMOSFET method

Details Bottom source LDMOSFET method Bottom source LDMOSFET method

2009-06-25

2010-12-14

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S233000, C257SE21409

Reexamination Certificate

active

07851286

ABSTRACT:
This invention discloses a method to form a bottom-source lateral diffusion MOS (BS-LDMOS) device with a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The method includes a step of applying a sinker-channel mask for carrying out a deep sinker multiple energy implant to form a combined sinker-channel region in lower portion of an epitaxial layer to function as a buried source-body contact extending to and contacting a bottom of the substrate functioning as a bottom source electrode.

REFERENCES:
patent: 5473180 (1995-12-01), Ludikhuize
patent: 6506648 (2003-01-01), Hebert et al.
patent: 6727127 (2004-04-01), Darmawan et al.
patent: 7061057 (2006-06-01), Babcock et al.

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