Bottom resist layer composition and patterning process using...

Details Bottom resist layer composition and patterning process using... Bottom resist layer composition and patterning process using...

2007-07-10

2010-06-29

Hamilton, Cynthia (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S271100, C430S313000, C430S272100, 57, 57, C525S161000, C525S176000, C216S047000

Reexamination Certificate

active

07745104

ABSTRACT:
There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.

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English translation of JP, 2004-205658, A ( 2004) from machine translation from AIPN Japan Patent Office National Center for Industrial Property Information and Training, generated Jul. 19, 2009, 36 pages.
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