Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-28
2009-12-08
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S152000, C438S153000, C438S166000, C257S059000, C257S061000, C257S066000, C257SE21133, C257SE21134
Reexamination Certificate
active
07629207
ABSTRACT:
A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region.
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“A Poly-Si TFT Fabricated by Excimer Laser Recrystallization on Floating Active Structure”; Authors: Cheon-Hong Kim, et al.; IEE Electron Device Letters, vol. 23, No. 6, Jun. 2002, pp. 315-317.
Cha Young-kwan
Lim Hyuck
Park Young-soo
Xianyu Wenxu
Cantor & Colburn LLP
Nguyen Dao H
Samsung Electronics Co,. Ltd.
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