Bottom electrode for memory device and method of forming the...

Details Bottom electrode for memory device and method of forming the... Bottom electrode for memory device and method of forming the...

2008-03-25

2008-03-25

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S637000

Reexamination Certificate

active

07348238

ABSTRACT:
Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in the contacts by capping and encapsulating the conductive material used to form the contact. The exemplary cap may be made of a nitride material.

REFERENCES:
patent: 6117725 (2000-09-01), Huang
patent: 6121086 (2000-09-01), Kuroda et al.
patent: 2001/0030367 (2001-10-01), Noguchi et al.
patent: 2004/0175921 (2004-09-01), Cowley et al.
patent: 2004/0224497 (2004-11-01), Barth
patent: 2005/0151264 (2005-07-01), Saito et al.
patent: 2005/0242377 (2005-11-01), Eguchi et al.
patent: 2006/0006374 (2006-01-01), Chang
patent: 2006/0035429 (2006-02-01), Cho
patent: 2006/0094236 (2006-05-01), Elkins et al.

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