Boron trifluoride system for plasma etching of silicon dioxide

Details Boron trifluoride system for plasma etching of silicon dioxide Boron trifluoride system for plasma etching of silicon dioxide

1985-05-09

1986-04-15

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, 156646, 156657, 156662, 204192EC, 252 791, 252372, C03C 1500, C23C 1500

Patent

active

045825815

ABSTRACT:
BF.sub.3 based mixtures for selectively etching thin layers of silicon dioxide over silicon for use in the plasma etch process for integrated circuits manufacture is disclosed.
In the process, when trace amounts of formaldehyde are added to the etch system the rate on oxide inceases markedly. The effect on the silicon is not substantial. The optional addition of an inert diluent gas did not substantially change these results.

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