Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Patent
1992-08-25
1994-10-11
Breneman, R. Bruce
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
437235, 437238, 437240, H01L 2912, H01L 2100, H01L 2102, H01L 21302
Patent
active
053543874
ABSTRACT:
A composite BPSG insulating and planarizing layer is formed over stepped surfaces of a semiconductor wafer by a novel two step process. The composite BPSG layer is characterized by the absence of discernible voids and a surface which is resistant to loss of boron in a subsequent etching step. The two step deposition process comprises a first step to form a void-free BPSG layer by a CVD deposition using gaseous sources of phosphorus and boron dopants and tetraethylorthosilicate (TEOS) as the source of silicon; and then a second step to form a capping layer of BPSG by a plasma-assisted CVD deposition process while again using gaseous sources of phosphorus and boron dopants, and TEOS as the source of silicon, to provide a BPSG cap layer having a surface which is non-hygroscopic and resistant to loss of boron by subsequent etching.
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Fukuma Kazuto
Lee Peter W.
Nagashima Makoto
Sato Tetsuya
Wang David N. K.
Applied Materials Inc.
Breneman R. Bruce
Everhart B.
Taylor John P.
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