Boron ion sources for ion implantation apparatus

Details Boron ion sources for ion implantation apparatus Boron ion sources for ion implantation apparatus

1997-12-11

1999-11-02

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, 250424, 250425, H01J 37317, H01J 3708

Patent

active

059775521

ABSTRACT:
In an efficient ion source BF.sub.3 gas is first passed over solid boron heated in an oven to at least 1100.degree. C. to reduce the BF.sub.3 to BF molecules. It is also proposed to use solid boron as feed stock by heating this in an oven to at least 1800.degree. C. to produce boron vapour. Either a reactive gas such as fluorine or an inert gas such as Argon is also introduced into the arc chamber to react with or sputter off boron condensing on the arc chamber walls.

REFERENCES:
patent: 2842466 (1958-07-01), Moyer
patent: 3960505 (1976-06-01), Beck et al.

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