Atsuo Fukumoto

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Details Atsuo Fukumoto Atsuo Fukumoto

: Semiconductor device manufacturing: process
: Formation of semiconductive active region on any substrate

: Inventor
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Boron-doped p-type single crystal silicon carbide semiconductor

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

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Profile ID: LFUS-PAI-P-696858

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