Ferroelectric thin-film device

Details Ferroelectric thin-film device Ferroelectric thin-film device

1999-08-12

2000-08-29

Smith, Matthew

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257325, 257761, 257767, 438 3, 438240, 438393, H01L 27108

Patent

active

061112844

ABSTRACT:
A ferroelectric thin-film device comprises: a single crystal substrate; a conductive thin film formed on the single crystal substrate; and an oriented ferroelectric oxide thin film having a perovskite structure formed on the conductive thin film. The oriented ferroelectric thin film comprises a first layer having a composition changing from the interface with the conductive thin film in the thickness direction and a second layer having a constant composition formed on the first layer. The composition of the first layer and the composition of the second layer are substantially the same at the boundary between the first layer and the second layer.

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