Borderless vias with HSQ gap filled patterned metal layers

Details Borderless vias with HSQ gap filled patterned metal layers Borderless vias with HSQ gap filled patterned metal layers

1998-10-23

2000-05-09

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438710, 438677, H01L 2144

Patent

active

060603844

ABSTRACT:
Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is overcome by treating the degraded HSQ layer with an H.sub.2 -containing plasma to restore the dangling Si--H bonds, thereby passivating the surface and preventing moisture absorption, before filling the via opening with conductive material, such as a barrier layer.

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