Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-11
2006-07-11
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S596000, C438S655000
Reexamination Certificate
active
07074666
ABSTRACT:
A borderless contact structure and method of fabricating the structure, the method including: (a) providing a substrate; (b) forming a polysilicon line on the substrate, the polysilicon line having sidewalls; (c) forming an insulating sidewall layer on the sidewalls of the polysilicon line; (d) removing a portion of the polysilicon line and a corresponding portion of the insulating sidewall layer in a contact region of the polysilicon line; and (e) forming a silicide layer on the sidewall of the polysilicon line in the contact region. Also an SRAM cell using the borderless contact structure and a method of fabricating the SRAM cell.
REFERENCES:
patent: 6066534 (2000-05-01), Son
patent: 6153510 (2000-11-01), Ishibashi
patent: 6207514 (2001-03-01), Furukawa et al.
patent: 6261924 (2001-07-01), Mandelman et al.
patent: 6333220 (2001-12-01), Mandelman et al.
patent: 6335279 (2002-01-01), Jung et al.
patent: 6403423 (2002-06-01), Weybright et al.
patent: 6512299 (2003-01-01), Noda
patent: 6531724 (2003-03-01), Furukawa et al.
patent: 2002/0111025 (2002-08-01), Weybright et al.
patent: 2003/0228752 (2003-12-01), Strane et al.
IBM Confidential, Self-Aligned Borderless Contacts, Strange et al., 4 pages. (2002).
Furukawa Toshiharu
Horak David V.
Koburger, III Charles W.
Sabo William D.
Schmeiser, Olsen & Wattts
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