Border region defect reduction in hybrid orientation...

Details Border region defect reduction in hybrid orientation... Border region defect reduction in hybrid orientation...

2009-08-07

2010-12-21

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S455000, C438S479000, C257S204000, C257SE27064, C257SE21632

Reexamination Certificate

active

07855111

ABSTRACT:
Hybrid orientation technology (HOT) substrates for CMOS ICs include (100)-oriented silicon regions for NMOS and (110) regions for PMOS for optimizing carrier mobilities in the respective MOS transistors. Boundary regions between (100) and (110) regions must be sufficiently narrow to support high gate densities and SRAM cells. This invention provides a method of forming a HOT substrate containing regions with two different silicon crystal lattice orientations, with boundary morphology less than 40 nanometers wide. Starting with a direct silicon bonded (DSB) wafer of a (100) substrate wafer and a (110) DBS layer, NMOS regions in the DSB layer are amorphized by a double implant and recrystallized on a (100) orientation by solid phase epitaxy (SPE). Crystal defects during anneal are prevented by a low temperature oxide layer on the top surface of the wafer. An integrated circuit formed with the inventive method is also disclosed.

REFERENCES:
patent: 6911379 (2005-06-01), Yeo et al.
patent: 7372107 (2008-05-01), Yeo et al.
patent: 2004/0195646 (2004-10-01), Yeo et al.

Affiliated with

Also associated with

Rating

Border region defect reduction in hybrid orientation... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Border region defect reduction in hybrid orientation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Border region defect reduction in hybrid orientation... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4234503