Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-02-20
2007-02-20
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S189110, C365S203000, C365S185180
Reexamination Certificate
active
11269697
ABSTRACT:
There are provided a boosted voltage generating circuit and a semiconductor memory device having the boosted voltage generating circuit which includes a booster circuit for outputting high voltage obtained by boosting the power supply voltage, a regulator circuit supplied with the high voltage, for generating voltage whose voltage value is smaller than the value of the high voltage and which is variably set to at least two values based on the high voltage at the operating time, and a equalizer circuit connected to the booster circuit and regulator circuit, for short-circuiting an output node of the booster circuit and an output node of the regulator circuit in response to a first control signal, wherein the operative period of the regulator circuit and the short-circuiting operation period of the equalizer circuit do not overlap each other.
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European Search Report EP Appln. No. 01112062.3-2210 dtd Sep. 6, 2001.
Atsumi Shigeru
Miyaba Takeshi
Tanzawa Toru
Banner & Witcoff , Ltd.
Nguyen Viet Q.
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