Boost voltage generator for controlling a memory cell array

Details Boost voltage generator for controlling a memory cell array Boost voltage generator for controlling a memory cell array

1997-06-19

1999-03-23

Hoang, Huan

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36518909, 365226, G11C 700

Patent

active

058869336

ABSTRACT:
A boost voltage generating circuit for a memory device prevents excessive voltage on a word line for a memory cell array and reduces power consumption by utilizing an internal array reference voltage signal as a reference signal for the boost voltage generating circuit. The circuit maintains the boost voltage power supply signal at a predetermined level independently of the voltage level of an internal peripheral reference voltage signal which is applied to a peripheral circuit and which can be increased to increase the speed of the memory device without causing excessive voltage on the word line. The boost voltage generating circuit includes a level detector circuit which receives the array reference voltage signal as a reference signal. The boost voltage generating circuit also includes a pulse generator and a pumping circuit which utilize the array reference voltage signal as a power supply.

REFERENCES:
patent: 5592421 (1997-01-01), Kaneko et al.
patent: 5673232 (1997-09-01), Furutani
patent: 5677889 (1997-10-01), Haraguchi et al.

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