Bonding wire for semiconductor device

Details Bonding wire for semiconductor device Bonding wire for semiconductor device

2006-01-05

2010-10-26

Nguyen, Chau N (Department: 2831)

Electricity: conductors and insulators

Conduits, cables or conductors

Combined

C174S126200

Reexamination Certificate

active

07820913

ABSTRACT:
The present invention provides a bonding wire improved in formability of a ball part, improved in bondability, good in loop controllability, improved in bonding strength of a wedge connection, securing industrial production ability as well, and mainly comprised of copper which is more inexpensive than gold wire, that is, provides a bonding wire for a semiconductor device comprised of a bonding wire having a core material having copper as its main ingredient and a surface covering layer over the core material and of a conductive metal of a composition different from the core material, characterized in that the surface covering layer has as its main ingredients two or more types of metals selected from gold, palladium, platinum, rhodium, silver, and nickel and the surface covering layer has a concentration gradient of one or both of a main ingredient metal or copper in the wire radial direction.

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Korean Office Action dated Feb. 25, 2009 issued in corresponding Korean Application No. 10-2007-7017936.
Singh et al., “Enhancing Fine Pitch, High I/O Devices with Copper Ball Bonding”, Electronic Components and Technology Conference, 2005, pp. 843-847.

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