Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-01-10
1995-01-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257684, 257745, 257748, 257751, 257728, 257782, 257774, 257913, 257779, H01L 2348, H01L 2962, H01L 2940
Patent
active
053789261
ABSTRACT:
A gallium arsenide monolithic microwave integrated circuit (MMIC) chip (12) has microelectronic devices (16, 18) formed on a frontside surface (12a), and via holes (12c, 12d) formed through the chip (12) from the frontside surface (12a) to a backside surface (12b). The backside surface (12b) of the chip (12) is bonded to a molybdenum carrier (14) by an eutectic gold/tin alloy (20). A barrier layer (22) including a refractory metal nitride material (22a) is sputtered onto the backside surface (12b) and into the via holes (12c, 12d) of the chip (12) prior to bonding. The barrier layer (22) blocks migration of tin from the eutectic gold-tin alloy (20) through the via holes (12c,-12d) to the frontside surface (12a) of the chip (12) during the bonding operation, thereby preventing migrated tin from adversely affecting the microelectronic devices (16, 18).
REFERENCES:
patent: 3877063 (1975-04-01), Abraham et al.
patent: 4772935 (1988-09-01), Lawler et al.
patent: 4935805 (1990-06-01), Calviello et al.
Nestork, "Wafer Power Distribution Using Backside Conductive Plane", IBM Technical Disclosure Bulletin, vol. 16, No. 3, Aug. 1973, p. 1009.
Chi Tom Y.
Raymond Brook D.
Denson-Low W. K.
Grunebach Georgann S.
Gudmestad Terje
Hughes Aircraft Company
Jackson Jerome
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