Bonding metallurgy for three-dimensional interconnect

Details Bonding metallurgy for three-dimensional interconnect Bonding metallurgy for three-dimensional interconnect

2008-07-21

2010-12-14

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S667000, C257SE21590

Reexamination Certificate

active

07851346

ABSTRACT:
A method provides a first substrate with a conductive pad and disposes layers of Cu, TaN, and AlCu, respectively, forming a conductive stack on the conductive pad. The AlCu layer of the first substrate is bonded to a through substrate via (TSV) structure of a second substrate, wherein a conductive path is formed from the conductive pad of the first substrate to the TSV structure of the second substrate.

REFERENCES:
patent: 6133136 (2000-10-01), Edelstein et al.
patent: 7315072 (2008-01-01), Watanabe
patent: 10-223833 (1998-08-01), None

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