Bonding gate oxide with high-k additives

Details Bonding gate oxide with high-k additives Bonding gate oxide with high-k additives

2007-04-24

2007-04-24

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S591000, C438S785000

Reexamination Certificate

active

10917886

ABSTRACT:
A technique for producing a thin gate oxide having a relatively high dielectric constant. Embodiments relate to the structure and development of a gate oxide having a thickness of less than 1 nm, having a dielectric constant greater than twenty, and being substantially free of undesired electrical characteristics caused by exposure of the gate oxide to high complementary metal-oxide-semiconductor processing temperatures.

REFERENCES:
patent: 5810923 (1998-09-01), Yano et al.
patent: 2003/0183870 (2003-10-01), Sugiyama et al.
patent: 2003/0215996 (2003-11-01), Putkonen
patent: 2004/0152340 (2004-08-01), Yamamoto et al.

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