Bonded silicon carbide parts in a plasma reactor

Details Bonded silicon carbide parts in a plasma reactor Bonded silicon carbide parts in a plasma reactor

1997-06-18

1999-06-08

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, 31511121, 134 11, 20429802, 20429831, C23C 1600

Patent

active

059102217

ABSTRACT:
A plasma reactor, for example, for processing a semiconductor wafer, in which parts of the chamber are formed of multiple pieces of silicon carbide that have been bonded together. The bonding may be performed by diffusion bonding or by using a bonding agent such as polyimide. These silicon carbide parts typically face and define a plasma region. Preferably, the surface facing the plasma is coated with a silicon carbide film, such as that deposited by chemical vapor deposition, which is more resistant to erosion by the plasma. Advantageously, the different parts are formed with different electrical resistivities consistent with forming an advantageous plasma.

REFERENCES:
patent: 4999228 (1991-03-01), Matsumoto et al.
patent: 5578129 (1996-11-01), Moriya
patent: 5653808 (1997-08-01), MacLeish et al.
Hirai et al., "Silicon carbide prepared by chemical vapor deposition," Silicon Carbide Ceramics--1: Fundamental and Solid Reaction, eds. Somiya et al., (Elsevier, 1991), pp. 77-98.
Yamada et al., "Properties and applications of silicon carbide ceramics," Silicon Carbide Ceramics--1: Fundamental and Solid Reaction, ibid., p. 18.
Iseki, "Joining of SiC ceramics," Silicon Carbide Ceramics--1: Fundamental and Solid Reaction, ibid., pp. 239-263.

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