Bond pad structure for integrated circuit chip

Details Bond pad structure for integrated circuit chip Bond pad structure for integrated circuit chip

2007-03-27

2007-03-27

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257SE23050

Reexamination Certificate

active

11058392

ABSTRACT:
An integrated circuit chip is provided, which includes a bond pad structure. The bond pad structure includes a bond pad, a first metal plate, and a second metal plate. The first metal plate is located under the bond pad. The first metal plate has a first outer profile area. The second metal plate is located under the first metal plate. A cumulative top view outer profile area of the first metal plate and the second metal plate is larger than the first outer profile area of the first metal plate. The second metal plate may have a second outer profile area that is substantially equal to or larger than the first outer profile area. A first vertical axis may extend through a centroid of the first metal plate, and a centroid of the second metal plate may be laterally offset relative to the first vertical axis.

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