Body-contacted semiconductor structures and methods of...

Details Body-contacted semiconductor structures and methods of... Body-contacted semiconductor structures and methods of...

2007-10-26

2009-10-27

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S279000, C438S412000, C438S479000, C257SE21339, C257SE21346, C257SE21563, C257SE21564, C257SE21651, C257SE27075, C257SE27084, C257SE27092, C257SE27096, C257SE29346

Reexamination Certificate

active

07608506

ABSTRACT:
A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body contact in the buried dielectric layer of the SOI wafer. The body contact electrically couples a semiconductor body with a channel region of the access device of one vertical memory cell and a semiconductor substrate of the SOI wafer. The body contact provides a current leakage path that reduces the impact of floating body effects upon the vertical memory cell. The body contact may be formed by an ion implantation process that modifies the stoichiometry of a region of the buried dielectric layer so that the modified region becomes electrically conductive with a relatively high resistance.

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