Body contact for a MOSFET device fabricated in an SOI layer

Details Body contact for a MOSFET device fabricated in an SOI layer Body contact for a MOSFET device fabricated in an SOI layer

1997-07-14

1998-10-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, H01L 2701

Patent

active

058180850

ABSTRACT:
A MOSFET device structure, on a silicon on insulator layer, in which a body contact to the silicon on insulator layer exists, has been developed. The MOSFET device structure features a heavily doped P type body contact region in a lightly doped source and drain region of the MOSFET device structure, formed from an ion implantation through a metal silicide layer. The addition of the body contact results in more controllable device characteristics, in terms of drain currents, etc., than for counterparts fabricated in silicon on insulator layer, without the use of a body contact.

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