Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-12
2008-10-07
Elms, Richard T. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000
Reexamination Certificate
active
07432552
ABSTRACT:
A body biasing structure of devices connected in series on an SOI substrate is provided. According to some embodiments, the shallow junction of common source/drain regions enables all devices to bias by only one body contact on an SOI substrate like a conventional bulk MOSFET, and the floating body effect on an SOI substrate can be prevented.
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Weste, Neil H. E. & Eshraghian, Kamran, “Principles of CMOS VLSI Design: A systems perspective,” Second Edition, AT&T, 1993, 5 pages.
Kim Tae-Hoon
Park Byung-Gook
Park II-Han
Bernstein Allison P
Elms Richard T.
Marger Johnson & McCollom PC
Samsung Electronics Co,. Ltd.
Seoul National University Industry Foundation
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