Block-divided semiconductor memory device

Details Block-divided semiconductor memory device Block-divided semiconductor memory device

1983-11-30

1986-06-17

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365221, 365230, G11C 1300

Patent

active

045960011

ABSTRACT:
In a semiconductor memory device, memory cells (1-1 to 1-4, 1'-1, 1'-2) are divided into a plurality of blocks (BK.sub.1, BK.sub.2) in which a plurality of pairs of sense lines (S.sub.1, S.sub.1, . . . , S.sub.4, S.sub.4) are provided. The sense lines are commonly connected to each other, i.e., the sense lines of one block (BK.sub.1) are connected to the respective sense lines of the other block (BK.sub.2). The sense relationship between two adjacent sense lines (S.sub.1, S.sub.2) belonging to one block (BK.sub.1) is opposite to the sense relationship between the corresponding two adjacent sense lines (S.sub.1, S.sub.2) belonging to the other block (BK.sub.2).

REFERENCES:
patent: 4330852 (1982-05-01), Redwine et al.

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