Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S230060, C365S230030
Reexamination Certificate
active
07978548
ABSTRACT:
A block decoding circuit of a semiconductor memory device includes a plurality of block decoders, a plurality of repair address check circuits, a dummy repair address check circuit and a block selection signal generation circuit. The plurality of block decoders are configured to decode a received block selection address. The plurality of repair address check circuits are configured to generate second output signals based on whether a received block selection address and word line selection address are repair addresses. The dummy repair address check circuit is configured to generate a control signal in response to the block selection address and the word line selection address. The block selection signal generation circuit is configured to generate block selection signals based on the first output signals from the plurality of block decoders, the control signal from the dummy repair address circuit, and the second output signals from the repair address check circuits.
REFERENCES:
patent: 2009/0003118 (2009-01-01), Yoo
patent: 2009/0168570 (2009-07-01), Park
patent: 2001-035184 (2001-02-01), None
patent: 10-1999-0079136 (1999-11-01), None
patent: 10-2000-0045904 (2000-07-01), None
patent: 10-2000-0061317 (2000-10-01), None
Harness Dickey & Pierce PLC
Nguyen Dang T
Samsung Electronics Co,. Ltd.
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