Block contact architectures for nanoscale channel transistors

Details Block contact architectures for nanoscale channel transistors Block contact architectures for nanoscale channel transistors

2007-10-09

2007-10-09

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000

Reexamination Certificate

active

11173866

ABSTRACT:
A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch.

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