BLEQ driving circuit in semiconductor memory device

Details BLEQ driving circuit in semiconductor memory device BLEQ driving circuit in semiconductor memory device

2007-10-09

2007-10-09

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S149000, C365S189110

Reexamination Certificate

active

11019496

ABSTRACT:
A bit line equalization signal (BLEQ) driving circuit for generating an equalization signal used to perform a precharge operation in a semiconductor memory device includes a second boosted voltage generator for producing a second boosted voltage by pumping a supply voltage, a BLEQ driver for generating the equalization signal by using the second boosted voltage in response to an equalization command and providing the equalization signal to a precharge unit, an equalizer and an I/O switch module. By using the second boosted voltage VPUP, which is lower than a first boosted voltage and higher than the supply voltage, as the equalization signal to be provided to gates of transistors for precharging a low power device to a precharge voltage level, it is possible to save current that a voltage pump consumes and satisfy a constant tRP.

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