Blanket-selective chemical vapor deposition using an ultra-thin

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 97, 427250, 427255, 4272557, 2041921, 20419217, B05D 512, C23C 1604, C23C 1606, C23C 1404

Patent

active

060663588

ABSTRACT:
The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of conducting layers to form continuous, void-free interconnects in sub-half micron, high aspect ratio aperture width applications and highly oriented conducting layers. In one aspect of the invention, a dielectric layer is formed over a conducting or semiconducting layer and etched to form an aperture exposing the underlying conducting or semiconducting layer on the aperture floor. An ultra-thin nucleation layer is then deposited by physical vapor deposition onto the field of the dielectric layer. A CVD metal layer is then deposited onto the structure to achieve selective deposition on the floor of the aperture, while preferably also forming a highly oriented blanket layer on the field. The present apparatus and process reduce the number of steps necessary to fabricate CVD metal interconnects and layers that are substantially void-free and planarized. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form vias and contacts occurs without the formation of oxides between the layers.

REFERENCES:
patent: 4920073 (1990-04-01), Wei et al.
patent: 4938996 (1990-07-01), Ziv et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 4994410 (1991-02-01), Sun et al.
patent: 5032233 (1991-07-01), Yu et al.
patent: 5080933 (1992-01-01), Grupen-Shemansky et al.
patent: 5091339 (1992-02-01), Carey
patent: 5240739 (1993-08-01), Doan et al.
patent: 5292558 (1994-03-01), Heller et al.
patent: 5308796 (1994-05-01), Feldman et al.
patent: 5310410 (1994-05-01), Begin et al.
patent: 5312774 (1994-05-01), Nakamura et al.
patent: 5354712 (1994-10-01), Ho et al.
patent: 5371042 (1994-12-01), Ong
patent: 5429991 (1995-07-01), Iwasaki et al.
patent: 5480836 (1996-01-01), Harada et al.
patent: 5514425 (1996-05-01), Ito et al.
patent: 5576928 (1996-11-01), Summerfelt et al.
patent: 5585308 (1996-12-01), Sardella
patent: 5585673 (1996-12-01), Joshi et al.
Mitsuru Sekiguchi, Toyokazu Fujii, and Michinari Tamanaka, "Suppression of Resistance Increase in Annealed A1/W Interconnects by Capacitively Coupled Plasma Nitridation on W Surface," No. 35, 1996, pp. 1111-1114.
G.A. Dixit, Ajit Paranjpe, Qi-Zhong Hong, L.M. Ting, J.D. Luttmer and R.H. Havemann, Via Plug Using Low Temperature CVD A1/TiN, Oct. 12, 1995, 3 pages.
Communication dated Aug. 19, 1998, 1 page.
European Search Report, EP 97 10 3489, 3 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Blanket-selective chemical vapor deposition using an ultra-thin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Blanket-selective chemical vapor deposition using an ultra-thin , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Blanket-selective chemical vapor deposition using an ultra-thin will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1835345

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.