Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-15
1999-06-22
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438714, 438720, 438643, H01L 21461
Patent
active
059152028
ABSTRACT:
An improved and new method of forming tungsten plugs on contact holes in semiconductor integrated circuit devices has been developed. The method uses a two step tungsten etchback process wherein redeposition of etch byproducts is surpressed, residue removal is enhanced, and the overetching requirement is reduced. The result is a more reliable, lower cost, higher yield process.
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Jang Dowson
Lo Chi-Hsin
Song Woei-Ji
Ackerman Stephen B.
Everhart Caridad
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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