Blanket etching process for formation of tungsten plugs

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438714, 438720, 438643, H01L 21461

Patent

active

059152028

ABSTRACT:
An improved and new method of forming tungsten plugs on contact holes in semiconductor integrated circuit devices has been developed. The method uses a two step tungsten etchback process wherein redeposition of etch byproducts is surpressed, residue removal is enhanced, and the overetching requirement is reduced. The result is a more reliable, lower cost, higher yield process.

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