Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-09-08
2008-11-04
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S189060, C365S189070, C365S189090, C365S191000
Reexamination Certificate
active
07447089
ABSTRACT:
A bitline precharge voltage generator can generate multiple bitline precharge voltages when bitlines are precharged, thereby providing a stable operation regardless of a core voltage used as a high data voltage of a memory cell. In the bitline precharge voltage generator, a core voltage level detecting unit detects a core voltage level, activates a first enable signal when the core voltage level is lower than a specific voltage level, and activates a second enable signal when the core voltage level is higher than the specific voltage level. A bitline precharge voltage generating unit generates a bitline precharge voltage corresponding to half of the core voltage level when the first enable signal is activated. A bitline precharge voltage clamping unit generates a clamped bitline precharge voltage having a constant voltage level when the second enable signal is activated, regardless of the core voltage level.
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Korean Patent Gazette issued in Korean Patent Application No. KR 10-0706826 issued on Apr. 12, 2007.
Im Jae-Hyuk
Park Kee-Teok
Hynix / Semiconductor Inc.
Luu Pho M.
McDermott Will & Emery LLP
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